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Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 6mm Width 25

SKU: 93102442678
USD6535.51 USD6574.51

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  • USA
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Ships within 48 hours · Estimated delivery Sep 16 - Sep 21

Description

6mm Width 25

-12 to 5° tilt

8-step (0 to 7) counterbalance

UPC: 851093003092

Temperature Coefficient � 15ppm/�C Power Rating 250mW Resistor Element Material Metal Film Automotive Qualification Standard - Resistance 432kohm Resistance Tolerance � 0

Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 6mm Width 25This is a IGBT Array & Module Transistor, N Channel, 100 A, 1. 7 V, 355 W, 1. 2 kV, Module product from INFINEON with the model number FS75R12KE3GBOSA1Product details Transistor Polarity N Channel DC Collector Current 100A Collector Emitter Saturation Voltage Vce(on) 1. 7V Power Dissipation Pd 355W Collector Emitter Voltage V(br)ceo 1. 2kV Transistor Case Style Module No. of Pins Operating Temperature Max 125C Product Range EconoPACK 3 Series RoHS

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